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廣電計(jì)量積極布局第三代半導(dǎo)體功率器件的測試業(yè)務(wù),引進(jìn)國際先進(jìn)的測試技術(shù),為功率半導(dǎo)體產(chǎn)業(yè)上下游企業(yè)提供器件參數(shù)檢測服務(wù),助力器件國產(chǎn)化、高新化發(fā)展。測試項(xiàng)目包括:靜態(tài)參數(shù)、動態(tài)參數(shù)、熱特性、雪崩耐量、短路特性及絕緣耐壓測試;設(shè)備支持0-1500A,0-3000V的器件參數(shù)檢測,覆蓋MIL-STD-750,IEC 60747系列,GB/T29332等標(biāo)準(zhǔn)。
服務(wù)介紹
隨著技術(shù)發(fā)展,第三代半導(dǎo)體功率器件開始由實(shí)驗(yàn)室階段步入商業(yè)應(yīng)用,未來應(yīng)用潛力巨大,這些新型器件測試要求更高的電壓和功率水平,更快的開關(guān)時(shí)間。
測試周期:
根據(jù)標(biāo)準(zhǔn)、試驗(yàn)條件及被測樣品量確定
產(chǎn)品范圍:
MOSFET、IGBT、DIODE、BJT,第三代半導(dǎo)體器件等分立器件,以及上述元件構(gòu)成的功率模塊
測試項(xiàng)目:
| 靜態(tài)參數(shù) | 符號 |
| Drain to Source Breakdown Voltage | BVDSS |
| Drain Leakage Current | IDSS |
| Gate Leakage Current | IGSS |
| Gate Threshold Voltage | VGS(th) |
| Drain to Source On Resistance | RDS(on) |
| Drain to Source On Voltage | VDS(on) |
| Body Diode Forward Voltage | VSD |
| Internal Gate Resistance | Rg |
| Input capacitance | Cies |
| Output capacitance | Coes |
| Reverse transfer capacitance | Cres |
| Transconductance | gfs |
| Gate to Source Plateau Voltage | Vgs(pl) |
| 動態(tài)參數(shù) | 符號 |
| Turn-on delay time | td(on) |
| Rise time | tr |
| Turn-off delay time | td(off) |
| Fall time | tf |
| Turn-on energy | Eon |
| Turn-off energy | Eoff |
| Diode reverse recovery time | trr |
| Diode reverse recovery charge | Qrr |
| Diode peak reverse recovery current | Irrm |
| Diode peak rate of fall of reverse recovery current |
dirr/dt |
| Total gate charge | QG |
| Gate-Emitter charge | QGC |
| Gate-Collector charge | QGE |
| 其他參數(shù) | 符號 |
| thermal resistance | Rth |
| Unclamped Inductive Switching | UIS |
| Reverse biased safe operating area | RBSOA |
| Short circuit safe operation area | SCSOA |


